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STTH1302CFP Datasheet(PDF) 2 Page - STMicroelectronics |
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STTH1302CFP Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 7 page STTH1302CT/CG/CFP 2/7 Symbol Parameter Value Unit Rth (j-c) Junction to case TO-220AB / D 2PAK Per diode 3 °C/W TO-220FPAB 5.5 TO-220AB / D 2PAK Total 1.9 °C/W TO-220FPAB 4.5 Rth (c) Coupling TO-220AB / D 2PAK 0.8 °C/W TO-220FPAB 3.5 THERMAL RESISTANCES Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage Current Tj = 25°C VR =VRRM 6 µA Tj = 125°C 3 60 VF* Forward Voltage drop Tj = 25°C IF = 6.5 A 1.1 V Tj = 125°C IF = 6.5 A 0.81 0.95 Tj = 25°C IF = 13 A 1.25 Tj = 125°C IF = 13 A 0.95 1.1 STATIC ELECTRICAL CHARACTERISTICS (per diode) Pulse test : * tp = 380 µs, δ <2% To evaluate the conduction losses use the following equation : P=0.80xIF(AV) + 0.023 x IF 2 (RMS) When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Symbol Parameter Test Conditions Min. Typ. Max. Unit trr Reverse recovery time Tj = 25°C IF = 0.5 A Irr = 0.25 A IR =1A 16 25 ns tfr Forward recovery time Tj = 25°C IF = 6.5 A dIF/dt = 100 A/µs VFR =1.1xVF max 70 ns VFP Forward recovery voltage Tj = 25°C IF = 6.5 A dIF/dt = 100 A/µs 2.2 V DYNAMIC CHARACTERISTICS (per diode) |
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