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STTA306B-TR Datasheet(PDF) 4 Page - STMicroelectronics |
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STTA306B-TR Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 8 page  0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 tfr(ns) IF=IF(av) VFR=1.1*VF max. Tj=125°C dIF/dt(A/µs) Fig. 9: Forward recovery time versus dIF/dt (90% confidence). 1 10 100 200 1 2 5 10 VR(V) C(pF) F=1MHz Fig. 10: Junction capacitance versus reverse voltage applied (typical values). 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16 18 20 22 24 VFP(V) IF=IF(av) Tj=125°C dIF/dt(A/µs) Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence). 25 50 75 100 125 0.7 0.8 0.9 1.0 1.1 IRM S factor Tj(°C) Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). STTA306B 4/8 |
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