RQK0608BQDQSTL-E datasheet(5/8 Pages) RENESAS

Part #	RQK0608BQDQSTL-E

Description	Silicon N Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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5 / 8 page

RQK0608BQDQS

REJ03G1621-0100 Rev.1.00 Mar 03, 2008

Page 5 of 7

Dynamic Input Characteristics

Gate Charge Qg (nC)

Switching Characteristics

Drain Current ID (A)

Typical Capacitance vs.

Drain to Source Voltage

Drain to Source Voltage VDS (V)

Input Capacitance vs.

Gate to Source Voltage

Gate to Source Voltage VGS (V)

Reverse Drain Current vs.

Source to Drain Voltage

Source to Drain Voltage VSD (V)

Body-Drain Diode Forward Voltage vs.

Case Temperature

Case Temperature Tc (°C)

10

100

1000

010

20

30

40

60

50

0.2

0.3

0.4

0.5

0.6

–25

0

25

50

75

100 125 150

0

8

4

26

8

10

0

0.4

0.8

1.2

1.6

2.0

4

2

6

8

Crss

Coss

VGS = 0 V

f = 1 MHz

Ciss

400

450

500

550

600

–10 –8 –6 –4 –2

024

68 10

350

0

10

12

16

40

20

0

60

80

VGS = –2.5, –4.5, –10 V

0 V

Pulse Test

Tc = 25

°C

2.5 V

4.5 V

VDD = 50 V

25 V

10 V

VDD = 10 V

25 V

50 V

ID = 2.4 A

Tc = 25

°C

10000

1000

100

10

1

0.01

0.1

1

10

VGS = 4.5 V, VDD = 10 V

Rg = 4.7

Ω, duty ≤ 1 %

Tc = 25

°C

tr

tf

td(off)

td(on)

VDS = 0

f = 1MHz

10 V

1 mA

ID = 10 mA

VGS = 0

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