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RQK0605JGDQA Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # RQK0605JGDQA
Description  Silicon N Channel MOS FET Power Switching
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RQK0605JGDQA Datasheet(HTML) 2 Page - Renesas Technology Corp

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RQK0605JGDQA
Rev.4.00 Jun 15, 2006 page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
60
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
±10
µA
VGS =
±16 V, VDS = 0
Drain to source leak current
IDSS
1
µA
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
2.0
V
VDS = 10 V, ID = 1 mA
RDS(on)
82
103
m
ID = 1.5 A, VGS = 10 V
Note3
Drain to source on state resistance
RDS(on)
93
131
m
ID = 1.5 A, VGS = 4.5 V
Note3
Forward transfer admittance
|yfs|
3.6
6
S
ID = 1.5 A, VDS = 10 V
Note3
Input capacitance
Ciss
405
pF
Output capacitance
Coss
58
pF
Reverse transfer capacitance
Crss
23
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn - on delay time
td(on)
14
ns
Rise time
tr
43
ns
Turn - off delay time
td(off)
43
ns
Fall time
tf
3.7
ns
ID = 1 A, VGS = 10 V,
RL = 10
Ω, Rg = 4.7 Ω
Total gate charge
Qg
6.9
nC
Gate to source charge
Qgs
0.9
nC
Gate to drain charge
Qgd
0.8
nC
VDD = 10 V, VGS = 10 V,
ID = 3.1A
Body - drain diode forward voltage
VDF
0.8
V
IF = 1.5 A, VGS = 0
Note3
Notes: 3. Pulse test


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