RQK0303MGDQATL-E datasheet(1/7 Pages) RENESAS

Part #	RQK0303MGDQATL-E

Description	Silicon N Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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Rev.4.00 Jun 15, 2006 page 1 of 6

RQK0303MGDQA

Silicon N Channel MOS FET

Power Switching

REJ03G1276-0400

Rev.4.00

Jun 15, 2006

Features

• Low on-resistance

RDS(on) = 42 m

Ω typ (V

GS = 10 V, ID = 1.8 A)

• Low drive current

• High speed switching

• 4.5 V gate drive

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

1. Source

2. Gate

3. Drain

S

D

G

2

1

3

Note:

Marking is “MG”.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

30

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

3.7

A

Drain peak current

ID(Pulse)

Note1

5

A

Body - drain diode reverse drain current

IDR

3.7

A

Channel dissipation

Pch

Note2

0.8

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. When using the glass epoxy board (FR-4: 40

× 40 × 1 mm)

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