RQK0301FGDQSTL-E datasheet(3/7 Pages) RENESAS

Part #	RQK0301FGDQSTL-E

Description	Silicon N Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 7 page

RQK0301FGDQS

Rev.3.00 Jun 22, 2006 page 3 of 6

Main Characteristics

0.01

0.1

1

10

0.1

1

10

100

0.01

100

5

4

6

3

4

2

5

3

1

6

4

2

5

3

1

0

01

2

0.0001

0.001

0.01

1

02

4

3

–25

0

25

50

75

100 125

150

34

0.1

1

0.1

1

10

–25

°C

Tc = 75

°C

25

°C

VDS = 5 V

Pulse Test

Tc = 75

°C

25

°C

–25

°C

VDS = 5 V

Pulse Test

VDS = 10 V

Pulse Test

ID = 10 mA

1 mA

100

µA

2.0

1.5

0.5

0

1.0

0

25

75

100

125

150

50

100

µs

Ta = 25

°C

1 Shot Pulse

2.2 V

2.4 V

10 V

5 V

8 V

4 V

2 V

3 V

2.6 V

Pulse Test

Tc = 25

°C

2.8 V

VGS = 0 V

Ambient Temperature Ta (

°C)

Maximum Channel Power

Dissipation Curve

Maximum Safe Operation Area

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Drain to Source Voltage VDS (V)

Typical Transfer Characteristics (1)

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics (2)

Gate to Source Voltage VGS (V)

Gate to Source Cutoff Voltage vs.

Case Temperature

Case Temperature Tc (

°C)

*When using the glass epoxy board (FR-4: 40

× 40 × 1 mm)

Operation in this area

is limited by RDS(on)

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RQK0301FGDQSTL-E Datasheet(PDF) 3 Page - Renesas Technology Corp

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