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RJK0332DPB Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # RJK0332DPB
Description  Silicon N Channel Power MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0332DPB Datasheet(HTML) 1 Page - Renesas Technology Corp

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REJ03G1641-0400 Rev.4.00 Apr 10, 2008
Page 1 of 6
RJK0332DPB
Silicon N Channel Power MOS FET
Power Switching
REJ03G1641-0400
Rev.4.00
Apr 10, 2008
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 3.6 mΩ typ. (at VGS = 10 V)
• Pb-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
G
D
SSS
4
1 23
5
1, 2, 3
Source
4
Gate
5
Drain
1 2
3 4
5
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
35
A
Drain peak current
ID(pulse)
Note1
140
A
Body-drain diode reverse drain current
IDR
35
A
Avalanche current
IAP
Note 2
15
A
Avalanche energy
EAR
Note 2
22.5
mJ
Channel dissipation
Pch
Note3
45
W
Channel to Case Thermal Resistance
θch-C
2.78
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25
°C, Rg ≥ 50 Ω
3. Tc = 25
°C


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