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RJJ0601JPN-00-02 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJJ0601JPN-00-02
Description  Silicon P Channel MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJJ0601JPN-00-02 Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJJ0601JPN
REJ03G1602-0100
Rev.1.00
Nov 21, 2007
Page 4 of 6
0
–4
–8
–12
–16
0
0
–10
–20
–30
–40
50
100
150
200
Gate Charge Qg (nC)
Dynamic Input Characteristics
0
–0.4
–0.8
–1.2
–1.6
–2.0
–100
–50
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (°C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
VGS = 0 V
Pulse Test
–10 V
Avalanche Test Circuit
Avalanche Waveform
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Ω
Vin
–15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
EAR =
L
• I
AP
2
•
2
1
VDSS
VDSS – VDD
250
200
150
100
50
25
50
75
100
125
150
0
ID = –90 A
VDS
VGS
VDD = –25 V
–10 V
–5 V
−0
−10
−20
−40
−50
−30
100000
10000
1000
100
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
VDD = –5 V
–10 V
–25 V
L = 100
µH
VDD = –25 V
duty < 0.1 %
Rg
≥ 50 Ω


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