REJ03G1571-0100 Rev.1.00 Nov 16, 2007

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RJM0306JSP

Silicon N / P Channel Power MOS FET

High Speed Power Switching

REJ03G1571-0100

Rev.1.00

Nov 16, 2007

Features

• Two elements each of N and P channels are incorporated (suitable for H-bridge circuit)

• High density mounting

• Low on-resistance

• Capable of 4 V gate drive

• High temperature D-S leakage guarantee

Avalanche rating

Outline

RENESAS Package code: PRSP0008DD-D

(Package name: SOP-8 <FP-8DAV> )

1 2

3 4

5

6

7

8

MOS4

Pch

MOS3

Pch

MOS1

Nch

MOS2

Nch

S 3

S 7

8 G

2 G

6 G

4 G

D 5

D 1

1

MOS1 (Nch)

MOS4 (Pch)

MOS1 (Nch)

MOS1 (Nch)

MOS2 (Nch)

MOS2 (Nch)

MOS2 (Nch)

MOS3 (Pch)

MOS3 (Pch)

MOS3 (Pch)

MOS4 (Pch)

MOS4 (Pch)

Drain

2

Gate

3

Source

4

Gate

5

Drain

6

Gate

7

Source

8

Gate

Pin No.

Element

Electrode