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STT4NF30L Datasheet(PDF) 3 Page - STMicroelectronics |
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STT4NF30L Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 5 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD =15 V ID =2 A RG =4.7 Ω VGS =4.5 V (see t est circuit, f igure 3) 13 30 17 40 ns ns Qg Q gs Qgd Tot al G ate Charge Gat e-Source Charge Gat e-Drain Charge VDD =24 V ID =4 A VGS =4.5 V 8 3.2 2.6 12 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit tr(Voff) tf tc Off -volt age Rise T ime Fall T ime Cross-over Time VDD =24 V ID =4 A RG =4.7 Ω VGS =4.5 V (see t est circuit, f igure 5) 6 9 20 8 12 26 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 4 16 A A VSD ( ∗)Forward On Voltage ISD =4 A VGS =0 1. 2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A di/dt = 100 A/ µs VDD =15 V Tj = 150 oC (see t est circuit, f igure 5) 22 13 1.2 ns nC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STT4NF30L 3/5 |
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