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STT1NF100 Datasheet(PDF) 3 Page - STMicroelectronics |
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STT1NF100 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 6 page 3/6 STT1NF100 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD =50V, ID = 0.5A RG = 4.7Ω VGS =10V (see test circuit, Figure 1) 4ns tr Rise Time 5.5 ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =50V, ID =1A, VGS =10V (see test circuit, Figure 2) 4 1 1.5 6 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 50V, ID = 0.5A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 1) 13 6.5 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 1 A ISDM (2) Source-drain Current (pulsed) 4 A VSD (1) Forward On Voltage ISD = 1A, VGS =0 1.2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1A, di/dt = 100A/µs, VDD =20V, Tj = 150°C (see test circuit, Figure 3) 45 60 2.7 ns nC A |
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