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RQJ0305EQDQA Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # RQJ0305EQDQA
Description  Silicon P Channel MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RQJ0305EQDQA Datasheet(HTML) 2 Page - Renesas Technology Corp

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RQJ0305EQDQA
REJ03G1718-0100 Rev.1.00 Jul 28, 2008
Page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
–30
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
+8
V
IG = +100
µA, VDS = 0
Gate to source breakdown voltage
V(BR)GSS
–12
V
IG = –100
µA, VDS = 0
Gate to source leak current
IGSS
+10
µA
VGS = +6 V, VDS = 0
Gate to source leak current
IGSS
–10
µA
VGS = –10 V, VDS = 0
Drain to source leak current
IDSS
–1
µA
VDS = –30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–0.4
–1.4
V
VDS = –10 V, ID = -1 mA
Drain to source on state resistance
RDS(on)
110
140
m
ID = –1.3 A, VGS = –4.5 V
Note3
Drain to source on state resistance
RDS(on)
165
230
m
ID = –1.3 A, VGS = –2.5 V
Note3
Forward transfer admittance
|yfs|
2.6
3.9
S
ID = –1.3 A, VDS = –10 V
Note3
Input capacitance
Ciss
330
pF
Output capacitance
Coss
70
pF
Reverse transfer capacitance
Crss
40
pF
VDS = –10 V, VGS = 0,
f = 1 MHz
Turn - on delay time
td(on)
17
ns
Rise time
tr
37
ns
Turn - off delay time
td(off)
39
ns
Fall time
tf
10
ns
ID = –1.3 A
VGS = –4.5 V
RL = 7.7
Rg = 4.7
Total gate charge
Qg
3.0
nC
Gate to Source charge
Qgs
0.6
nC
Gate to drain charge
Qgd
1.3
nC
VDD = –10 V
VGS = –4.5 V
ID = –2.4 A
Body - drain diode forward voltage
VDF
–0.85
–1.2
V
IF = –2.4 A, VGS = 0
Note3
Notes: 3. Pulse test


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