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RQJ0203WGDQATL-E Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RQJ0203WGDQATL-E
Description  Silicon P Channel MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RQJ0203WGDQATL-E Datasheet(HTML) 3 Page - Renesas Technology Corp

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RQJ0203WGDQA
Rev.3.00 May 24, 2006 page 3 of 6
Main Characteristics
–10
–8
–6
–4
–2
0
0
–0.01
–0.1
–1
–10
–100
–0.01
–0.1
–1
–10
–100
–4
–2
–6
–3
–1
–5
–0.0001
–0.001
–0.01
–1
–0.1
0
–0.5
–1
–1.5
–2
0
0.2
0.4
0.6
0.8
1
0
50
100
150
0
–2
–4
–6
–1
–3
–5
0 –0.5 –1 –1.5 –2 –2.5 –3 –3.5 –4
0
–0.5
–1
–1.5
–25
0
25
50
75
100 125 150
VGS = 0 V
Pulse Test
Tc = 25
°C
–1.8 V
–2.0 V
–2.2 V
–10 V
–2.4 V
–2.6 V
–2.8 V
–3.0 V
–3.2 V
–3.4 V
–3.6 V
–5 V
–1.6 V
Ta = 25
°C
1 Shot Pulse
100
µs
1 ms
PW
=
100
ms
DC
Oper
ation
Tc = 75
°C
–25
°C
25
°C
VDS = –10 V
Pulse Test
VDS = –10 V
Pulse Test
Tc = 75
°C
25
°C
–25
°C
ID = –10 mA
–1 mA
–0.1 mA
VDS = –10 V
Pulse Test
Ambient Temperature Ta (
°C)
Maximum Channel Power
Dissipation Curve
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics (1)
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics (2)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
Case Temperature Tc (
°C)
*When using the glass epoxy board (FR-4: 40
× 40 × 1 mm)
Operation in this area
is limited by RDS(on)


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