Rev.1.00 Oct 16, 2006 page 1 of 12

RQA0008RXDQS

Silicon N-Channel MOS FET

REJ03G1326-0100

Rev.1.00

Oct 16, 2006

Features

• High Output Power, High Gain, High Efficiency

Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz)

• Compact package capable of surface mounting

Outline

1

2

3

4

1. Gate

2. Source

3. Drain

4. Source

1

3

2, 4

RENESAS Package code: PLZZ0004CA-A

(Package Name : UPAK    )

R

Note:

Marking is “RX”.

*UPAK is a trademark of Renesas Technology Corp.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

16

V

Gate to source voltage

±5

V

Drain current

2.4

A

Channel dissipation

Pch

note1

10

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note1: Value at Tc = 25

°C

This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested.