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RQA0008RXDQS Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RQA0008RXDQS Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 13 page Rev.1.00 Oct 16, 2006 page 1 of 12 RQA0008RXDQS Silicon N-Channel MOS FET REJ03G1326-0100 Rev.1.00 Oct 16, 2006 Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz) • Compact package capable of surface mounting Outline 1 2 3 4 1. Gate 2. Source 3. Drain 4. Source 1 3 2, 4 RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK ) R Note: Marking is “RX”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 16 V Gate to source voltage VGSS ±5 V Drain current ID 2.4 A Channel dissipation Pch note1 10 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note1: Value at Tc = 25 °C This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested. |
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