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RKZ27TKG Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. RKZ27TKG
Description  Silicon Epitaxial Planar Zener Diode for Bidirectional Surge Absorption
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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RKZ27TKG Datasheet(HTML) 2 Page - Renesas Technology Corp

   
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RKZ27TKG
REJ03G1665-0100 Rev.1.00 May 07, 2008
Page 2 of 4
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Zener voltage
VZ
26.2
31.5
V
IZ = 1 mA, 40 ms pulse
Reverse current
IR
0.1
μA
VR = 24 V
Capacitance
C
12
30
pF
VR = 0 V, f = 1 MHz
ESD-Capability *
1
30
kV
C = 150 pF, R = 330
Ω, Both forward
and reverse direction 10 pulse
Note
: Failure criterion ; IR > 0.1 μA at VR = 24 V.( Both direction)


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