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R1RW0416DI Datasheet(PDF) 5 Page - Renesas Technology Corp

Part No. R1RW0416DI
Description  Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit)
Download  14 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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R1RW0416DI Datasheet(HTML) 5 Page - Renesas Technology Corp

 
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R1RW0416DI Series
Rev.1.00, Mar.12.2004, page 5 of 12
Recommended DC Operating Conditions
(Ta =
−40 to +85°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC*
3
3.0
3.3
3.6
V
V
SS*
4
0
0
0
V
Input voltage
V
IH
2.0
V
CC + 0.5*
2
V
V
IL
−0.5*1
0.8
V
Notes: 1. V
IL (min) = −2.0 V for pulse width (under shoot) ≤ 6 ns
2. V
IH (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 6 ns
3. The supply voltage with all V
CC pins must be on the same level.
4. The supply voltage with all V
SS pins must be on the same level.
DC Characteristics
(Ta =
−40 to +85°C, V
CC = 3.3 V ± 0.3 V, VSS = 0 V)
Parameter
Symbol
Min
Max
Unit
Test conditions
Input leakage current
|I
LI|
2
µA
V
IN = VSS to VCC
Output leakage current
|I
LO|
2
µA
V
IN = VSS to VCC
Operating power supply current
I
CC
130
mA
Min cycle
CS# = V
IL, IOUT = 0 mA
Other inputs = V
IH/VIL
Standby power supply current
I
SB
40
mA
Min cycle, CS# = V
IH,
Other inputs = V
IH/VIL
I
SB1
5
mA
f = 0 MHz
V
CC ≥ CS# ≥ VCC − 0.2 V,
(1) 0 V
≤ V
IN ≤ 0.2 V or
(2) V
CC ≥ VIN ≥ VCC − 0.2 V
Output voltage
V
OL
0.4
V
I
OL = 8 mA
V
OH
2.4
V
I
OH = −4 mA
Capacitance
(Ta = +25
°C, f = 1.0 MHz)
Parameter
Symbol
Min
Max
Unit
Test conditions
Input capacitance*
1
C
IN
6
pF
V
IN = 0 V
Input/output capacitance*
1
C
I/O
8
pF
V
I/O = 0 V
Note:
1. This parameter is sampled and not 100% tested.


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