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2SK3211STL-E Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SK3211STL-E Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 9 page 2SK3211(L), 2SK3211(S) Rev.4.00 May 15, 2006 page 3 of 8 Main Characteristics Power vs. Temperature Derating Case Temperature Tc ( °C) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Drain to Source Voltage VDS (V) Typical Transfer Characteristics Gate to Source Voltage VGS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 160 0 50 100 150 200 1000 10 1 0.1 0.01 1 3 30 100 20 01 2 3 4 5 0 2 468 10 50 3.5 V 3 V VGS = 2.5 V Pulse Test 6 V 4 V 1000 100 10 300 1 10 100 250 500 20 50 10 20 5 2.5 0 0 0 0 0 40 4 10 0.5 80 8 20 1.0 120 12 30 1.5 16 40 2.0 48 12 16 20 ID = 15 A 5 A 10 A 200 100 VGS = 4 V 10 V Pulse Test Pulse Test 25°C Operation in this area is limited by RDS (on) VDS = 10 V Pulse Test Ta = 25°C 10 µs 1 ms PW = 10 ms (1 Shot) DC Operation (Tc = 2 5°C) 100 µs –25°C Tc = 75°C 10 V |
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