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2SK3210STL Datasheet(PDF) 1 Page - Renesas Technology Corp |
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2SK3210STL Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 9 page Rev.3.00 Sep. 30, 2004 page 1 of 8 2SK3210(L), 2SK3210(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G0414-0300 (Previous ADE-208-760A (Z)) Rev.3.00 Sep. 30, 2004 Features • Low on-resistance RDS = 40 m Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 4 1 2 3 4 LDPAK D G S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS ±20 V Drain current ID 30 A Drain peak current ID (pulse) Note1 120 A Body-drain diode reverse drain current IDR 30 A Avalanche current IAP Note3 30 A Avalanche energy EAR Note3 67 mJ Channel dissipation Pch Note2 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10ms, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω |
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