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2SK3163-E Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK3163-E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK3163 Rev.3.00 Sep 07, 2005 page 4 of 7 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 20 16 12 8 4 –50 0 50 100 150 200 0 VGS = 10 V 4 V Pulse Test 10, 20, 50 A ID = 50 A 10 A 20 A 0.1 0.3 1 3 10 30 100 500 100 200 20 50 10 2 5 1 0.5 Tc = –25 °C 75 °C 25 °C VDS = 10 V Pulse Test 0.1 0.3 1 3 10 30 100 010 20 30 40 50 1000 10000 3000 100 80 60 40 20 0 20 16 12 8 4 80 160 240 320 400 0 1000 100 200 20 10 0.1 0.2 2 10 100 1000 500 100 200 20 50 10 di / dt = 50 A / µs VGS = 0, Ta = 25°C 300 20 1 100 VGS = 0 f = 1 MHz Ciss Coss Crss ID = 75 A VGE VCE VCC = 50 V 25 V 10 V VCC = 50 V 25 V 10 V 0.5 5 500 50 50 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % tr td(on) td(off) tf 30000 |
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