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2SK3153-E Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK3153-E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK3153 Rev.3.00 Sep 07, 2005 page 4 of 7 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 200 160 120 80 40 –40 0 40 80 120 160 0 VGS = 10 V 4 V Pulse Test 5 A, 10 A ID = 15 A 15 A 0.1 0.3 1 3 10 30 100 100 10 30 3 1 0.3 0.1 VDS = 10 V Pulse Test Tc = –25 °C 25 °C 75 °C 5 A, 10 A 0.1 0.3 1 3 10 30 0 10 20 30 40 50 100 1000 300 200 160 120 80 40 0 20 16 12 8 4 20 40 60 80 100 0 100 10 20 2 1 0.1 0.2 2 10 1000 100 300 30 10 30 20 1 10 ID = 15 A VGS 0.5 5 50 5 50 3000 VDS VDD = 120 V 50 V 25 V di / dt = 50 A / µs VGS = 0, Ta = 25°C 10000 VGS = 0 f = 1 MHz Ciss Coss Crss VDD = 120 V 50 V 25 V 200 500 1000 tr td(on) td(off) tf VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % |
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