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2SJ451 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SJ451 Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SJ451 REJ03G864-0400 Rev.4.00 Sep 07, 2007 Page 2 of 6 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS –20 — — V ID = –100 µA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 Zero gate voltage drain current IDSS — — –1.0 µA VDS = –16 V, VGS = 0 Gate to source leak current IGSS — — ±2.0 µA VGS = ±16 V, VDS = 0 Gate to source cutoff voltage VGS (off) –0.5 — –1.5 V ID = –10 µA, VDS = –5 V RDS (on) 1 — 2.3 3.5 Ω ID = –100 mA, VGS = –4 V Note 2 Static drain to source on state resistance RDS (on) 2 — 5.0 9.0 Ω ID = –40 mA, VGS = –2.5 V Note 2 Forward transfer admittance |yfs| 0.13 0.23 — S ID = –100 mA, VDS = –10 V Note 2 Input capacitance Ciss — 2.4 — pF Output capacitance Coss — 31 — pF Reverse transfer capacitance Crss — 0.6 — pF VDS = –10 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 170 — ns Rise time tr — 680 — ns Turn-off delay time td (off) — 3.0 — µs Fall time tf — 2.8 — µs ID = –0.1 A VGS = –10 V RL = 100 Ω Note: 2. Pulse test |
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