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STP185N10F3 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP185N10F3 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 12 page Preliminary Data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. August 2008 Rev 1 1/12 12 STB185N10F3 STP185N10F3 N-channel 100 V, 4.0 m Ω, 120 A, D2PAK, TO-220 STripFET™ Power MOSFET Features ■ Ultra low on-resistance ■ 100% avalanche tested Application ■ Switching application – Automotive Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Figure 1. Internal schematic diagram Type VDSS RDS(on) ID STB185N10F3 100 V 4.5 m Ω 120 A(1) 1. Value limited by wire bonding STP185N10F3 100 V 4.8 m Ω 120 A(1) D2PAK 1 3 TO-220 1 2 3 Table 1. Device summary Order codes Marking Package Packaging STB185N10F3 185N10F3 D2PAK Tape and reel STP185N10F3 185N10F3 TO-220 Tube www.st.com |
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