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STP160N75F3 Datasheet(PDF) 4 Page - STMicroelectronics |
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STP160N75F3 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3 4/16 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS= 0 75 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,@125°C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20V ± 200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 24 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 60A TO-220 TO-247 D²PAK 3.5 3.2 4 3.7 m Ω m Ω Table 5. Dynamic Symbol Parameter Test conditions Min Typ Max Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 6750 1080 40 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=37.5V, ID = 120A VGS =10V (see Figure 16) 85 27 26 nC nC nC |
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Similar Description - STP160N75F3 |
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