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38D5 Datasheet(PDF) 5 Page - Renesas Technology Corp |
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38D5 Datasheet(HTML) 5 Page - Renesas Technology Corp |
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Rev.3.04 May 20, 2008 Page 5 of 134 REJ03B0158-0304 38D5 Group Table 2 Performance overview (2) Parameter Function Power dissipation (QzROM version) In frequency/2 mode Std. 32 mW (Vcc = 5 V, f(XIN) = 12.5 MHz, Ta = 25 °C) In low-speed mode Std. 18 µW (Vcc = 2.5 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25°C) Power dissipation (Flash memory version) In frequency/2 mode Std. 20 mW (Vcc = 5 V, f(XIN) = 12.5 MHz, Ta = 25 °C) In low-speed mode Std. 1.1 mW (Vcc = 2.7 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25 °C) Input/Output characteristics Input/Output withstand voltage VCC Output current 10 mA Operating temperature range -20 to 85 °C Device structure CMOS silicon gate Package 80-pin plastic molded LQFP/QFP |
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