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STS4DPF30L Datasheet(PDF) 1 Page - STMicroelectronics

Part No. STS4DPF30L
Description  DUAL P-CHANNEL 30V - 0.07 ohm - 4A SO-8 STripFET™ POWER MOSFET
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS4DPF30L Datasheet(HTML) 1 Page - STMicroelectronics

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PRELIMINARY DATA
April 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STS4DPF30L
DUAL P-CHANNEL 30V - 0.07
Ω - 4A SO-8
STripFET™ POWER MOSFET
s
TYPICAL RDS(on) = 0.07 Ω
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based
process.
The
resulting
transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s
POWER MANAGEMENT IN CELLULAR
PHONES
s
DC-DC CONVERTER
TYPE
VDSS
RDS(on)
ID
STS4DPF30L
30 V
<0.08
4 A
SO-8
ABSOLUTE MAXIMUM RATINGS
(
•) Pulse width limited by safe operating area.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
30
V
VGS
Gate- source Voltage
± 16
V
ID
Drain Current (continuous) at TC = 25°C Single Operation
Drain Current (continuous) at TC = 100°C Single Operation
4
2.5
A
A
IDM(•)
Drain Current (pulsed)
16
A
Ptot
Total Dissipation at TC = 25°C Dual Operation
Total Dissipation at TC = 25°C Single Operation
2.0
1.6
W
W
INTERNAL SCHEMATIC DIAGRAM


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