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3803L Datasheet(PDF) 4 Page - Renesas Technology Corp

Part No. 3803L
Description  SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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3803L Datasheet(HTML) 4 Page - Renesas Technology Corp

 
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Rev.1.01
Jan 25, 2008
Page 4 of 117
REJ03B0212-0101
3803 Group (Spec.L)
Table 1
Performance overview
Parameter
Function
Number of basic instructions
71
Minimum instruction execution time
0.24
µs (Oscillation frequency 16.8 MHz)
Oscillation frequency
Oscillation frequency 16.8 MHz(Maximum)
Memory
sizes
Mask ROM version
ROM
60 Kbytes
RAM
2048 bytes
Flash memory version
ROM
60 Kbytes
RAM
2048 bytes
I/O port
P0-P6
56 pins
Software pull-up resistors
Built-in
Interrupt
21 sources, 16 vectors (8 external, 12 internal, 1 software)
Timer
8-bit
× 4 (with 8-bit prescaler), 16-bit × 1
Serial interface
8-bit
× 2 (UART or Clock-synchronized)
8-bit
× 1 (Clock-synchronized)
PWM
8-bit
× 1 (with 8-bit prescaler)
A/D converter
10-bit
× 16 channels (8-bit reading enabled)
D/A converter
8-bit
× 2 channels
Watchdog timer
16-bit
× 1
LED direct drive port
8 (average current: 15 mA, peak current: 30 mA, total current: 90 mA)
Clock generating circuits
Built-in 2 circuits
(connect to external ceramic rasonator or quartz-crystal oscillator)
Power
source
voltage
In high-speed
mode
At 16.8 MHz
Mask ROM version
4.5 to 5.5 V
Flash memory version
At 12.5 MHz
Mask ROM version
4.0 to 5.5 V
Flash memory version
At 8.4 MHz
Mask ROM version
2.7 to 5.5 V
Flash memory version
At 4.2 MHz
Mask ROM version
2.2 to 5.5 V
At 2.1 MHz
Mask ROM version
2.0 to 5.5 V
In middle-
speed mode
At 16.8 MHz
Mask ROM version
4.5 to 5.5 V
Flash memory version
At 12.5 MHz
Mask ROM version
2.7 to 5.5 V
Flash memory version
At 8.4 MHz
Mask ROM version
2.2 to 5.5 V
At 6.3 MHz
Mask ROM version
1.8 to 5.5 V
In low-speed
mode
At 32 MHz
Mask ROM version
1.8 to 5.5 V
Flash memory version 2.7 to 5.5 V
Power
dissipation
In high-speed mode
Mask ROM version
40 mW
Flash memory version 27.5 mW
In low-speed mode
Mask ROM version
45
µW
Flash memory version 1200
µW
Input/Output
characteris-
tics
Input/Output withstand voltage
VCC
Output current
10 mA
Operating temperature range
-20 to 85
°C
Device structure
CMOS sillicon gate
Package
64-pin plastic molded SDIP/LQFP/FLGA


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