2SK4093TZ-E datasheet(2/7 Pages) RENESAS

Part #	2SK4093TZ-E

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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2 / 7 page

2SK4093

REJ03G1534-0300 Rev.3.00 Feb 01, 2008

Page 2 of 6

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

250

—

V

ID = 10 mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

±10

—

V

IG =

±100 µA, VDS = 0

Zero gate voltage drain current

IDSS

—

1

µA

VDS = 250 V, VGS = 0

Gate to source leak current

IGSS

—

±10

µA

VGS =

±8 V, VDS = 0

Gate to source cutoff voltage

VGS(off)

0.5

—

1.5

V

VDS = 10 V, ID = 1 mA

Static drain to source on state

resistance

RDS(on)

—

1.9

2.6

Ω

ID = 0.5 A, VGS = 4 V

Note3

Static drain to source on state

resistance

RDS(on)

—

2.0

2.7

Ω

ID = 0.5 A, VGS = 2.5 V

Note3

Input capacitance

Ciss

—

140

—

pF

Output capacitance

Coss

—

18

—

pF

Reverse transfer capacitance

Crss

—

6

—

pF

VDS = 25 V

VGS = 0

f = 1 MHz

Turn-on delay time

td(on)

—

14

—

ns

Rise time

tr

—

17

—

ns

Turn-off delay time

td(off)

—

46

—

ns

Fall time

tf

—

16

—

ns

ID = 0.5 A

VGS = 4 V

RL = 250

Ω

Rg = 10

Ω

Total gate charge

Qg

—

5.5

—

nC

Gate to source charge

Qgs

—

0.4

—

nC

Gate to drain charge

Qgd

—

3.1

—

nC

VDD = 200 V

VGS = 4 V

ID = 1 A

Body-drain diode forward voltage

VDF

—

0.78

1.20

V

IF = 0.5 A, VGS = 0

Note3

Body-drain diode reverse recovery time

trr

—

80

—

ns

IF = 0.5 A, VGS = 0

diF/dt = 100 A/

µs

Notes: 3. Pulse test

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