R1LV3216R Series

Preliminary

REJ03C0367-0001, Rev.0.01, 2008.03.24

Page 5 of 16

Operation Table

CS1#

CS2

BYTE#

LB#

UB#

WE#

OE#

DQ0~7

DQ8~14

DQ15

Operation

H

X

X

X

X

X

X

High-Z

High-Z

High-Z

Stand-by

X

L

X

X

X

X

X

High-Z

High-Z

High-Z

Stand-by

X

X

H

H

H

X

X

High-Z

High-Z

High-Z

Stand-by

L

H

H

L

H

L

X

Din

High-Z

High-Z

Write in lower byte

L

H

H

L

H

H

L

Dout

High-Z

High-Z

Read in lower byte

L

H

H

H

L

L

X

High-Z

Din

Din

Write in upper byte

L

H

H

H

L

H

L

High-Z

Dout

Dout

Read in upper byte

L

H

H

L

L

L

X

Din

Din

Din

Word write

L

H

H

L

L

H

L

Dout

Dout

Dout

Word read

L

H

H

L

L

H

H

High-Z

High-Z

High-Z

Output disable

L

H

L

L

L

L

X

Din

High-Z

A-1

Byte write

L

H

L

L

L

H

L

Dout

High-Z

A-1

Byte read

L

H

L

L

L

H

H

High-Z

High-Z

A-1

Output disable

2. When apply BYTE# =“L”, please assign LB#=UB#=“L”.

Absolute Maximum Ratings

Parameter

Symbol

Value

unit

Power supply voltage relative to Vss

Vcc

-0.5 to +4.6

V

Terminal voltage on any pin relative to Vss

-0.5

V

Power dissipation

0.7

W

R ver.

0 to +70

°C

Operation temperature

Topr

*3

I ver.

-40 to +85

°C

Storage temperature range

Tstg

-65 to 150

°C

R ver.

0 to +70

°C

Storage temperature range under bias

Tbias

*3

I ver.

-40 to +85

°C

Note 1. –2.0V in case of AC (Pulse width ≤30ns)

2. Maximum voltage is +4.6V.

3. Ambient temperature range depends on R/I-version. Please see table on page 1.