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2SK3418-E Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK3418-E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK3418 Rev.2.00 Sep. 10, 2004 page 4 of 7 0.1 0.3 1 3 10 30 100 500 100 200 20 50 10 2 5 1 0.5 Tc = – 25 °C 75 °C 25 °C V = 10 V Pulse Test DS Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current 20 16 12 8 4 –50 0 50 100 150 200 0 V = 10 V GS 4 V 10, 20, 50 A I = 50 A D 10, 20 A Pulse Test 0.1 0.3 1 3 10 30 100 010 20 30 40 50 1000 10000 3000 100 80 60 40 20 0 20 16 12 8 4 80 160 240 320 400 0 1000 100 200 20 10 0.1 0.2 2 10 100 1000 500 100 200 20 50 10 di / dt = 50 A / µs V = 0, Ta = 25 °C GS 300 20 1 100 V = 0 f = 1 MHz GS Ciss Coss Crss I = 85 A D VGS VDS V = 50 V 25 V 10 V DS 0.5 5 V = 50 V 25 V 10 V DS 500 50 50 GS DD V = 10 V, V = 30 V PW = 5 µs, duty < 1 % r t d(on) t d(off) t tf 30000 Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current ID (A) Switching Characteristics |
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