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2SK3378ENTR-E Datasheet(PDF) 3 Page - Renesas Technology Corp

Part No. 2SK3378ENTR-E
Description  Silicon N Channel MOS FET High Speed Switching
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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2SK3378
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 3 of 6
Main Characteristics
0.5
0.4
0.3
0.2
0.1
0
24
68
10
500
400
300
200
100
0
2468
10
400
300
200
100
0
50
100
150
200
VGS = 3V
Tc =
25
°C
75
°C
Pulse Test
VDS = 10 V
Pulse Test
PW = 10 ms
(1 shot)
6 V
4 V
8 V
7 V
25
°C
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
Ambient Temperature Ta (
°C)
*Value on the alumina ceramic boad.(12.5x20x0.7mm)
Power vs. Temperature Derating
5 V
10
µs
100
µs
1 ms
2.0
1.6
1.2
0.8
0.4
0
24
6
8
10
0.1
0.5
0.2
50
20
10
2
5
1.0
0.5
1.0
ID = 100mA
50 mA
Pulse Test
VGS = 4V
10 V
Pulse Test
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
10 mA
0.1
1
10
50
5
1.0
0.1
0.01
0.001
DC
Operation
0.0005
0.002
0.005
0.02
0.05
0.2
0.5
2
0.05
0.2
0.5
2
5
20
Ta = 25
°C
Operation in
this area is limited
by RDS(on)




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