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2SK3378ENTL-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
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2SK3378ENTL-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page REJ03G1599-0200 Rev.2.00 Oct 23, 2007 Page 1 of 6 2SK3378 Silicon N Channel MOS FET High Speed Switching REJ03G1599-0200 (Previous: ADE-208-805) Rev.2.00 Oct 23, 2007 Features • Low on-resistance RDS = 2.7 Ω typ. (VGS = 10 V, ID = 50 mA) RDS = 4.7 Ω typ. (VGS = 4 V, ID = 20 mA) • 4 V gate drive device. • Small package (CMPAK) Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK 1 2 3 1. Source 2. Gate 3. Drain ) R D S G Note: Marking is EN *CMPAK is a trademark of Renesas Technology Corp. Absolute Maximum Rating (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 100 mA Drain peak current ID(pulse) Note1 400 mA Body-drain diode reverse drain current IDR 100 mA Channel dissipation Pch Note 2 300 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) |
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