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2SK3378 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. 2SK3378
Description  Silicon N Channel MOS FET High Speed Switching
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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2SK3378
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 2 of 6
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
30
V
ID = 100
µA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
±5
µA
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
1
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.3
2.3
V
ID = 10
µA, VDS = 5 V
RDS(on)
2.7
3.5
ID = 50 mA, VGS = 10 V
Note 3
Static drain to source on state
resistance
RDS(on)
4.7
7.0
ID = 20 mA, VGS = 4 V
Note 3
Forward transfer admittance
|yfs|
55
85
mS
ID = 50 mA, VDS =10 V
Note 3
Input capacitance
Ciss
3
pF
Output capacitance
Coss
8
pF
Reverse transfer capacitance
Crss
1
pF
VDS = 10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td(on)
100
ns
Rise time
tr
330
ns
Turn-off delay time
td(off)
1150
ns
Fall time
tf
940
ns
ID = 50 mA, VGS = 10 V
RL = 200
Notes: 3. Pulse test




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