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R1LV0414C-I Datasheet(PDF) 1 Page - Renesas Technology Corp

Part No. R1LV0414C-I
Description  Wide Temperature Range Version 4M SRAM (256-kword × 16-bit)
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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R1LV0414C-I Datasheet(HTML) 1 Page - Renesas Technology Corp

 
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Rev.2.01, Nov.24.2005, page 1 of 11
R1LV0414C-I Series
Wide Temperature Range Version
4M SRAM (256-kword
× 16-bit)
REJ03C0196-0201
Rev. 2.01
Nov.24.2005
Description
The R1LV0414C-I is a 4-Mbit static RAM organized 256-kword
× 16-bit. R1LV0414C-I Series has realized higher
density, higher performance and low power consumption by employing CMOS process technology (6-transistor
memory cell). The R1LV0414C-I Series offers low power standby power dissipation; therefore, it is suitable for
battery backup systems. It has packaged in 44-pin TSOP II.
Features
• Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
• Fast access time: 55/70 ns (max)
• Power dissipation:
 Active: 5.0 mW/MHz (typ)(V
CC = 2.5 V)
: 6.0 mW/MHz (typ) (VCC = 3.0 V)
 Standby: 1.25 µW (typ) (V
CC = 2.5 V)
: 1.5
µW (typ) (V
CC = 3.0 V)
• Completely static memory.
 No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
 Three state output
• Battery backup operation.
• Temperature range: −40 to +85°C
Ordering Information
Type No.
Access time
Package
R1LV0414CSB-5SI
55 ns
400-mil 44-pin plastic TSOP II (44P3W-H)
R1LV0414CSB-7LI
70 ns


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