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R1LV0408C-I Datasheet(PDF) 5 Page - Renesas Technology Corp |
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R1LV0408C-I Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 14 page R1LV0408C-I Series Rev.2.00, May.25.2004, page 5 of 12 Operation Table WE# CS# OE# Mode VCC current I/O0 to I/O7 Ref. cycle × H × Not selected ISB, ISB1 High-Z H L H Output disable ICC High-Z H L L Read ICC Dout Read cycle L L H Write ICC Din Write cycle (1) L L L Write ICC Din Write cycle (2) Note: H: VIH, L: VIL, ×: VIH or VIL Absolute Maximum Ratings Parameter Symbol Value Unit Power supply voltage relative to VSS VCC −0.5 to +4.6 V Terminal voltage on any pin relative to VSS VT −0.5* 1 to V CC + 0.5* 2 V Power dissipation PT 0.7 W Operating temperature Topr −40 to +85 °C Storage temperature range Tstg −65 to +150 °C Storage temperature range under bias Tbias −40 to +85 °C Notes: 1. VT min: −3.0 V for pulse half-width ≤ 30 ns. 2. Maximum voltage is +4.6 V. DC Operating Conditions (Ta = −40 to +85°C) Parameter Symbol Min Typ Max Unit Supply voltage VCC 2.7 3.0 3.6 V VSS 0 0 0 V Input high voltage VIH 2.2 VCC + 0.3 V Input low voltage VIL −0.3* 1 0.6 V Note: 1. VIL min: −3.0 V for pulse half-width ≤ 30 ns. |
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