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R1LP0408C-I Datasheet(PDF) 5 Page - Renesas Technology Corp

Part No. R1LP0408C-I
Description  Wide Temperature Range Version 4M SRAM (512-kword × 8-bit)
Download  14 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R1LP0408C-I Datasheet(HTML) 5 Page - Renesas Technology Corp

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R1LP0408C-I Series
Rev.2.00, May.26.2004, page 5 of 12
Operation Table
WE#
CS#
OE#
Mode
VCC current
I/O0 to I/O7
Ref. cycle
×
H
×
Not selected
ISB, ISB1
High-Z
H
L
H
Output disable
ICC
High-Z
H
L
L
Read
ICC
Dout
Read cycle
L
L
H
Write
ICC
Din
Write cycle (1)
L
L
L
Write
ICC
Din
Write cycle (2)
Note:
H: VIH, L: VIL,
×: VIH or VIL
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to VSS
VCC
−0.5 to +7.0
V
Terminal voltage on any pin relative to VSS
VT
−0.5*
1 to V
CC + 0.3*
2
V
Power dissipation
PT
0.7
W
Operating temperature
Topr
−40 to +85
°C
Storage temperature range
Tstg
−65 to +150
°C
Storage temperature range under bias
Tbias
−40 to +85
°C
Notes: 1. VT min:
−3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +7.0 V.
DC Operating Conditions
(Ta =
−40 to +85°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
4.5
5.0
5.5
V
VSS
0
0
0
V
Input high voltage
VIH
2.2
VCC + 0.3
V
Input low voltage
VIL
−0.3*
1
0.8
V
Note:
1. VIL min:
−3.0 V for pulse half-width ≤ 30 ns.


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