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2SK3228-E Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK3228-E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK3228 Rev.4.00 May 15, 2006 page 4 of 7 Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current 20 16 4 8 12 –50 0 50 100 150 200 0 ID = 50 A 10, 20 A 10, 20, 50 A 0.1 0.3 1 3 10 30 100 500 100 200 20 50 5 10 0.5 1 2 25°C 75°C Pulse Test VDS = 10 V Pulse Test Reverse Drain Current IDR (A) Body to Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics 0.1 0.3 1 3 10 30 100 1000 500 200 50 100 20 10 di / dt = 50 A / µs VGS = 0, Ta = 25°C 010 20 30 40 50 30000 10000 3000 1000 300 100 Ciss Coss Crss VGS = 0 f = 1 MHz 100 0 20 40 60 80 0 20 80 160 240 320 400 0 4 8 12 16 VGS VDS ID = 75 A 1000 500 200 50 100 20 10 0.3 1 3 10 30 100 0.1 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VDD = 50 V 25 V 10 V VDD = 50 V 25 V 10 V VGS = 10 V, VDD = 30 V PW = 5 µs, duty ≤ 1 % Tc = –25°C VGS = 4 V 10 V |
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