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2SK3140 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. 2SK3140
Description  Silicon N Channel MOS FET High Speed Power Switching
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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2SK3140 Datasheet(HTML) 2 Page - Renesas Technology Corp

   
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2SK3140
Rev.5.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
60
A
Drain peak current
ID(pulse)
Note 1
240
A
Body-drain diode reverse drain current
IDR
60
A
Avalanche current
IAP
Note 3
50
A
Avalanche energy
EAR
Note 3
214
mJ
Channel dissipation
Pch
Note 2
35
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
±0.1
µA
VGS = ±20 V, VDS = 0
Zero gate voltage drain current
IDSS
10
µA
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
2.5
V
ID = 1 mA, VDS = 10 V
Note 4
6.0
7.5
m
ID = 30 A, VGS = 10 V
Note 4
Static drain to source on state
resistance
RDS(on)
8.0
12
m
ID = 30 A, VGS = 4 V
Note 4
Forward transfer admittance
|yfs|
45
75
S
ID = 30 A, VDS = 10 V
Note 4
Input capacitance
Ciss
7100
pF
Output capacitance
Coss
1000
pF
Reverse transfer capacitance
Crss
280
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Total gate charge
Qg
125
nC
Gate to source charge
Qgs
25
nC
Gate to drain charge
Qgd
25
nC
VDD = 25 V, VGS = 10 V,
ID = 60 A
Turn-on delay time
td(on)
60
ns
Rise time
tr
250
ns
Turn-off delay time
td(off)
540
ns
Fall time
tf
320
ns
VGS = 10 V, ID = 30 A,
RL = 1
Body–drain diode forward voltage
VDF
1.0
V
IF = 60 A, VGS = 0
Body–drain diode reverse recovery
time
trr
80
ns
IF = 60 A, VGS = 0
diF/ dt = 50 A/
µs
Note:
4. Pulse test


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