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2SK3081-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SK3081-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SK3081 Rev.4.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 45 A Drain peak current ID(pulse) Note1 180 A Body-drain diode reverse drain current IDR 45 A Channel dissipation Pch Note2 75 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V RDS(on) — 10 14 m Ω ID = 20 A, VGS = 10 V Note3 Static drain to source on state resistance RDS(on) — 15 25 m Ω ID = 20 A, VGS = 4 V Note3 Forward transfer admittance |yfs| 20 30 — S ID = 20 A, VDS = 10 V Note3 Input capacitance Ciss — 1570 — pF Output capacitance Coss — 1100 — pF Reverse transfer capacitance Crss — 410 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 32 — ns Rise time tr — 300 — ns Turn-off delay time td(off) — 180 — ns Fall time tf — 200 — ns VGS = 10 V, ID = 20 A, RL = 0.5 Ω Body–drain diode forward voltage VDF — 1.0 — V IF = 45 A, VGS = 0 Body–drain diode reverse recovery time trr — 75 — ns IF = 45 A, VGS = 0 diF/ dt = 50 A/ µs Note: 3. Pulse test |
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