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2SK3081 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK3081 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK3081 Rev.4.00 Sep 07, 2005 page 4 of 6 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 50 40 30 20 10 –40 0 40 80 120 160 0 0.1 0.3 1 3 10 10 5 1 2 0.5 VGS = 4 V 10 V ID = 20 A 10 A 10, 20 A 50 A 30 20 50 100 25 °C Tc = –25 °C 75 °C VDS = 10 V Pulse Test Pulse Test 0.1 0.3 1 3 10 30 100 0 10 20 30 40 50 500 10000 1000 2000 5000 50 40 30 20 10 0 20 16 12 8 4 20 40 60 80 100 0 1000 500 100 200 20 50 10 0.1 0.3 3 10 100 1000 500 100 200 20 50 10 di / dt = 50 A / µs VGS = 0, Ta = 25°C 100 200 5 30 1 ID = 45 A VGS VDS VDD = 5 V 10 V 15 V VDD = 15 V 10 V 5 V VGS = 0 f = 1 MHz Ciss Coss Crss VGS = 10 V, VDD = 10 V PW = 5 µs, duty < 1 % tr td(on) td(off) tf |
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