2SK2569ZN-TR-E datasheet(4/7 Pages) RENESAS

Part #	2SK2569ZN-TR-E

Description	Silicon N Channel MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 7 page

2SK2569

Rev.3.00 Dec 27, 2006 page 4 of 6

Case Temperature TC (°C)

Static Drain to Source on State

Resistance vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance

vs. Drain Current

10

8

6

4

2

–40

0

40

80

120

160

0

ID = 0.2 A

0.1 A

0.05 A

VGS = 2.5 V

4 V

0.05, 0.1 A

Pulse Test

0.2 A

0.5

0.2

0.1

0.02

0.05

0.01

0.005

0.001 0.003

0.01

0.03

0.1

0.3

1

25

°C

Tc = –25

°C

75

°C

VDS = 10 V

Pulse Test

0

10

203040

50

100

30

10

3

1

0.3

0.1

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

tf

tr

td(on)

td(off)

0.01 0.02

0.05

0.1

0.2

0.5

1

VGS = 10 V

VDD = 30 V

PW = 5

µs

duty < 1 %

2

1

0.2

0.5

0.1

0.02

0.05

Drain Current

ID (A)

Switching Characteristics

0.20

0.16

0.12

0.08

0.04

0

0.2

0.4

0.6

0.8

1.0

VGS = 0

–5 V

Pulse Test

Source to Drain Voltage

VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

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2SK2569ZN-TR-E Datasheet(PDF) 4 Page - Renesas Technology Corp

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