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STS11NF3LL Datasheet(PDF) 1 Page - STMicroelectronics

Part No. STS11NF3LL
Description  N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS11NF3LL Datasheet(HTML) 1 Page - STMicroelectronics

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STS11NF3LL
N-CHANNEL 30V - 0.009
Ω - 11A SO-8
LOW GATE CHARGE STripFET
™ POWER MOSFET
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.011
Ω @ 4.5V
s
OPTIMAL RDS(on) xQg TRADE-OFF @ 4.5V
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size
™” strip-based process. The resul-
ting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND
OPTIMISED FOR HIGH EFFICIENCY CPU
CORE DC/DC CONVERTERS FOR MOBILE
PCs
®
INTERNAL SCHEMATIC DIAGRAM
May 2000
SO-8
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Un it
VDS
Drain-source Volt age (VGS =0)
30
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)30
V
VGS
G ate-source Voltage
± 15
V
ID
Drain Current (continuous) at Tc = 25
oC
Drain Current (continuous) at Tc =100
oC
11
7
A
A
IDM(
•)
Drain Current (pulsed)
44
A
Ptot
T otal Dissipation at Tc =25
oC
2.5
W
(
•) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STS11NF3LL
30 V
< 0.011
11 A
1/6


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