2SK1838S datasheet(3/8 Pages) RENESAS

Part #	2SK1838S

Description	Silicon N Channel MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 8 page

2SK1838(L), 2SK1838(S)

Rev.3.00 Nov 21, 2005 page 3 of 7

Main Characteristics

Case Temperature TC (°C)

Power vs. Temperature Derating

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

Drain Current ID (A)

Static Drain to Source on State

Resistance vs. Drain Current

20

15

10

5

0

50

100

150

200

1

3

10

30

100

300

1000

0.1

0.3

1

3

10

100

s

PW

=

10

ms

(1

s

hot)

Operation in this area

is limited by R

(on)

DS

1 ms

Ta = 25

°C

0.03

0.01

DC

Operation

(Tc

=

25

°C)

0

246

8

10

0.2

0.4

0.6

0.8

1.0

Pulse Test

8 V

10 V

6 V

4.5 V

4 V

V

= 3.5 V

GS

5 V

Tc = 75

°C

25

°C

– 25

°C

Pulse Test

V

= 10 V

DS

02

4

6

8

10

0.2

0.4

0.6

0.8

1.0

0

4

812

16

20

1

2

3

4

5

Pulse Test

0.5 A

0.2 A

I = 0.1 A

D

0.02

0.05

0.1

0.2

0.5

1

2

0.5

1

2

5

10

20

50

Pulse Test

V

= 10 V

GS

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