2SK1697EYTL-E datasheet(3/7 Pages) RENESAS

Part #	2SK1697EYTL-E

Description	Silicon N-Channel MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 7 page

2SK1697

Rev.2.00 May 11, 2006 page 3 of 6

Main Characteristics

Ambient Temperature Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

1.0

410

Drain to Source Voltage VDS (V)

0.8

0.2

26

8

0

0.4

0.6

VGS = 2 V

Pulse Test

4 V

3.5 V

3 V

2.5 V

10 V

6 V

Typical Output Characteristics

1.0

25

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

0.8

0.2

13

4

0

0.4

0.6

VDS = 10 V

Pulse Test

TC = 75°C

–25

°C

25

°C

1.0

410

Gate to Source Voltage VGS (V)

0.8

0.2

26

8

0

0.4

0.6

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

Pulse Test

0.2 A

ID = 0.1 A

0.5 A

50

5

0.05

Static Drain to Source on State

Resistance vs. Drain Current

20

10

2

5

1

0.5

Drain Current ID (A)

0.1

0.2

0.5

1

2

Pulse Test

VGS = 4 V

10 V

1.5

0

100

50

150

1.0

0.5

10

0.3

0.1

3

10

3

1

0.03

0.01

0.3

1

30

100

10

µs

1 ms

DC

Opera

tion

(T

C =

25

°C)

PW

=

10

ms

(1

Shot)

Ta = 25

°C

Operation in this area

is limited by RDS (on)

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2SK1697EYTL-E Datasheet(PDF) 3 Page - Renesas Technology Corp

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