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STPS80L60CY Datasheet(PDF) 2 Page - STMicroelectronics

Part No. STPS80L60CY
Description  POWER SCHOTTKY RECTIFIER
Download  4 Pages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS80L60CY Datasheet(HTML) 2 Page - STMicroelectronics

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Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
Per diode
0.70
°C/W
Total
0.50
Rth (c)
Coupling
0.3
THERMAL RESISTANCES
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR *
Reverse leakage current
Tj = 25°C
VR =VRRM
1.8
mA
Tj = 125°C
0.4
0.9
A
VF *
Forward voltage drop
Tj = 25
°CIF = 40 A
0.57
V
Tj = 125°C
0.50
0.56
Tj=25
°CIF = 80 A
0.78
Tj = 125°C
0.69
0.77
Pulse test :
* tp = 380 µs,
δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.36xIF(AV) + 0.005 x IF
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
0
5
10
15
20
25
30
35
0
1020
304050
IF(av)(A)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
T
δ=tp/T
tp
P(W)
Fig. 1: Conduction losses versus average current.
0
5
10
15
20
25
30
35
40
45
0
25
50
75
100
125
150
Tamb(°C)
Rth(j-a)=Rth(j-c)
Rth(j-a)=5°C/W
IF(av)(A)
Fig. 2: Average forward current versus ambient
temperature (
δ = 0.5).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (°C)
j
P(t )
P
(25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (µs)
p
P(t )
P
(1µs)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.


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