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STPS80L15CY Datasheet(PDF) 3 Page - STMicroelectronics |
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STPS80L15CY Datasheet(HTML) 3 Page - STMicroelectronics |
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STPS80L15CY 3/5 0 5 10 15 20 25 30 35 40 45 50 55 60 0 2 4 6 8 10 12 14 16 18 20 22 PF(av)(W) δ = 0.2 δ = 0.5 δ = 1 δ = 0.05 δ = 0.1 IF(av) (A) T δ=tp/T tp Fig. 1: Average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 0 5 10 15 20 25 30 35 40 45 50 IF(av)(A) Rth(j-a)=5°C/W Rth(j-a)=Rth(j-c) Tamb(°C) T δ=tp/T tp Fig. 2: Average forward current versus ambient temperature ( δ=0.5, per diode). 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(t ) P (1µs) ARM p ARM Fig. 3: Normalized avalanche power derating versus pulse duration. 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 T (°C) j P(t ) P (25°C) ARM p ARM Fig. 4: Normalized avalanche power derating versus junction temperature. 1E-3 1E-2 1E-1 1E+0 0 100 200 300 400 500 600 IM(A) Tc=75°C Tc=25°C Tc=50°C t(s) IM t δ=0.5 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). 1E-3 1E-2 1E-1 1E+0 0.0 0.2 0.4 0.6 0.8 1.0 Zth(j-c)/Rth(j-c) δ=0.1 δ=0.2 δ=0.5 Single pulse tp(s) T δ=tp/T tp Fig. 6: Relative variation of thermal impedance junction to case versus pulse (per diode). |
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