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2SK1328 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part No. 2SK1328
Description  Silicon N Channel MOS FET
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK1328 Datasheet(HTML) 4 Page - Renesas Technology Corp

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2SK1328, 2SK1329
Rev.2.00 Sep 07, 2005 page 4 of 6
1.0
40
160
Case Temperature TC (°C)
0.8
0.2
0
80
120
0
0.4
0.6
Static Drain to Source on State
Resistance vs. Temperature
15 A
VGS = 10 V
Pulse Test
10 A
ID = 5 A
–40
50
1.0
20
Drain Current ID (A)
20
2
0.5
2
10
0.5
5
10
Forward Transfer Admittance
vs. Drain Current
–25
°C
VDS = 20 V
Pulse Test
0.2
1.0
5
TC = 25°C
75
°C
5,000
1.0
20
Reverse Drain Current IDR (A)
2,000
200
0.5
2
10
50
500
1,000
Body to Drain Diode Reverse
Recovery Time
0.2
100
5
di/dt = 100 A/
µs, Ta = 25°C
VGS = 0 V
Pulse Test
10,000
20
50
Drain to Source Voltage VDS (V)
100
10
30
40
10
1,000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
0
Ciss
Coss
Crss
500
40
100
Gate Charge Qg (nc)
Dynamic Input Characteristics
400
100
20
60
80
0
200
300
VDS
100 V
20
16
4
0
8
12
VDD = 100 V
250 V
400 V
ID = 12 A
250 V
VDD = 400 V
VGS
250
Drain Current ID (A)
500
50
1.0
5
20
10
100
200
VGS = 10 V VDD = 30 V
PW = 2
µs, duty < 1%
0.5
20
10
Switching Characteristics
td (off)
tr
td (on)
tf
5


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