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2SK1167 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part No. 2SK1167
Description  Silicon N Channel MOS FET
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK1167 Datasheet(HTML) 3 Page - Renesas Technology Corp

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2SK1167, 2SK1168
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Power vs. Temperature Derating
150
100
50
0
50
100
150
Case Temperature TC (°C)
Maximum Safe Operation Area
100
30
10
3
0.1
1
3
10
30
100
300
1,000
Drain to Source Voltage VDS (V)
1.0
0.3
Operation in this area
is limited by RDS (on)
1 ms
10
µs
100
µs
Ta= 25
°C
PW
=
10
ms
(1
S
hot)
DC
Opera
tion
(T
C =
25
°C)
2SK1168
2SK1167
Typical Output Characteristics
20
12
8
4
0
4
8
12
20
Drain to Source Voltage VDS (V)
6 V
16
16
VGS = 4 V
Pulse Test
4.5 V
5.0 V
5.5 V
10 V
Typical Transfer Characteristics
20
16
8
4
0
24
6
8
10
Gate to Source Voltage VGS (V)
12
TC = 25°C
75
°C
–25
°C
VDS = 20 V
Pulse Test
10
8
4
2
0
4
8
12
16
20
6
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
10 A
ID = 5 A
20 A
5
2
1.0
0.5
0.05
1
2
5
20
50
100
Drain Current ID (A)
0.1
0.2
Pulse Test
10
VGS = 10 V
15 V
Static Drain to Source on State
Resistance vs. Drain Current


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