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2SK1167 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. 2SK1167
Description  Silicon N Channel MOS FET
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK1167 Datasheet(HTML) 2 Page - Renesas Technology Corp

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2SK1167, 2SK1168
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
2SK1167
450
Drain to source voltage
2SK1168
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
15
A
Drain peak current
ID(pulse)*
1
60
A
Body to drain diode reverse drain current
IDR
15
A
Channel dissipation
Pch*
2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
2SK1167
450
Drain to source
breakdown voltage
2SK1168
V(BR)DSS
500
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
±10
µA
VGS =
±25 V, VDS = 0
2SK1167
VDS = 360 V, VGS = 0
Zero gate voltage drain
current
2SK1168
IDSS
250
µA
VDS = 400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
3.0
V
ID = 1 mA, VDS = 10 V
2SK1167
0.25
0.36
Static drain to source on
state resistance
2SK1168
RDS(on)
0.30
0.40
ID = 8 A, VGS = 10 V *
3
Forward transfer admittance
|yfs|
8
13
S
ID = 8 A, VDS = 10 V *
3
Input capacitance
Ciss
2050
pF
Output capacitance
Coss
600
pF
Reverse transfer capacitance
Crss
75
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
30
ns
Rise time
tr
110
ns
Turn-off delay time
td(off)
150
ns
Fall time
tf
70
ns
ID = 8 A, VGS = 10 V,
RL = 3.75
Body to drain diode forward voltage
VDF
1.0
V
IF = 15 A, VGS = 0
Body to drain diode reverse recovery
time
trr
500
ns
IF = 15 A, VGS = 0,
diF/dt = 100 A/
µs
Note:
3. Pulse test


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