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2SK1167 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part No. 2SK1167
Description  Silicon N Channel MOS FET
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK1167 Datasheet(HTML) 5 Page - Renesas Technology Corp

  2SK1167 Datasheet HTML 1Page - Renesas Technology Corp 2SK1167 Datasheet HTML 2Page - Renesas Technology Corp 2SK1167 Datasheet HTML 3Page - Renesas Technology Corp 2SK1167 Datasheet HTML 4Page - Renesas Technology Corp 2SK1167 Datasheet HTML 5Page - Renesas Technology Corp 2SK1167 Datasheet HTML 6Page - Renesas Technology Corp 2SK1167 Datasheet HTML 7Page - Renesas Technology Corp  
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2SK1167, 2SK1168
Rev.2.00 Sep 07, 2005 page 5 of 6
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
8
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Pulse Test
5 V, 10 V
VGS = 0, –10 V
3
1.0
0.1
0.03
0.01
0.3
10
µ
100
µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
θch–c (t) = γ
S(t) • θch–c
θch–c = 1.25°C/W, T
C = 25°C
PDM
PW
T
D =
T
PW
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
0.01
0.05
0.02
0.2
0.1
0.5
1 Shot
Pulse
D = 1
Vin Monitor
Vout Monitor
RL
50
Vin = 10 V
D.U.T
.
VDD = 30 V
.
Switching Time Test Circuit
Vin
10 %
90 %
90 %
90 %
10 %
td (on)
td (off)
tr
tf
Vout
10 %
Waveforms


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