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2SK1167 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part No. 2SK1167
Description  Silicon N Channel MOS FET
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK1167 Datasheet(HTML) 4 Page - Renesas Technology Corp

  2SK1167 Datasheet HTML 1Page - Renesas Technology Corp 2SK1167 Datasheet HTML 2Page - Renesas Technology Corp 2SK1167 Datasheet HTML 3Page - Renesas Technology Corp 2SK1167 Datasheet HTML 4Page - Renesas Technology Corp 2SK1167 Datasheet HTML 5Page - Renesas Technology Corp 2SK1167 Datasheet HTML 6Page - Renesas Technology Corp 2SK1167 Datasheet HTML 7Page - Renesas Technology Corp  
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2SK1167, 2SK1168
Rev.2.00 Sep 07, 2005 page 4 of 6
1.0
0.8
0.6
0.4
0.2
0
0
40
80
120
160
Case Temperature TC (
°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
10 A
ID = 20 A
5 A
Forward Transfer Admittance vs. Drain Current
50
20
10
5
0.5
0.2
0.5
1.0
5
10
20
Drain Current ID (A)
1.0
2
2
75
°C
–25
°C
TC = 25°C
VDS = 20 V
Pulse Test
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
µs, Ta = 25°C
VGS = 0
Pulse Test
Reverse Drain Current IDR (A)
5,000
2,000
500
200
100
50
1,000
0.2
0.5
1.0
2
5
10
20
Typical Capacitance
vs. Drain to Source Voltage
100
010
20
30
40
50
Drain to Source Voltage VDS (V)
Coss
Ciss
Crss
10
VGS = 0
f = 1 MHz
1,000
10,000
Dynamic Input Characteristics
500
400
300
200
100
0
20
40
60
80
100
Gate Charge Qg (nc)
20
16
12
8
4
0
VDD = 100 V
VDD = 400 V
250 V
250 V
VDS
ID = 15 A
400 V
VGS
100 V
Switching Characteristics
1,000
200
100
50
20
10
500
0.5
1.0
2
5
10
20
50
Drain Current ID (A)
VGS = 10 V, VDD 30 V
PW = 2
µs, duty < 1%
td (off)
tr
tf
td (on)


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